iStellar-HE2000
High-energy ion implanter with a single-unit energy of 500KeV, supporting advanced process nodes such as 28nm/22nm. Offering high reliability and low cost, it is suitable for logic, memory, and power device applications in IC integrated circuits.

iKing HE/UHE
Ultra-high-energy ion implanter with single-unit energies of 1.5 MeV/2.5 MeV. Deployed for logic and memory chips, power devices, etc. Configurable with varying energies to meet diverse client requirements. Features include highly efficient and reliable operation, precise implantation control, exceptional beam current uniformity, minimal metal contamination, and low particulate pollution.